Abstract
Thin films of copper zinc tin sulphide (CZTS) have been deposited on glass substrate at various solution concentration and angular speed using sol-gel spin coating technique. Surface morphology showed that the deposited layers are continuous and pinhole free. The film’s particles are evenly distributed and adhered firmly to the substrates. X-ray diffraction studies revealed that the films are polycrystalline with tetragonal kesterite structure. Interplanar spacing and average crystallite size were estimated as 3.732 Å and 56.53 nm. Film’s thickness and stoichiometry were determined from Rutherford Backscattering Spectroscopy (RBS) as127 nm and Cu<sub>1.5</sub>Zn<sub>1.0</sub>Sn<sub>1.1</sub>S<sub>4.4</sub>O<sub>3.3</sub>. Optical studies showed that the deposited films exhibit direct band transition. The values of the energy gap were found between 1.30 and 1.60 eV. The result of the study suggested that the deposited CZTS thin films can perform as a good absorber material in nanostructured optoelectronic devices.
Highlights
One of the very viable clean energy supply that can meet the demand of human population and industries is solar energy, but its production is costly because of the technology involved
Copper, Zinc and Tin have been found as respective replacements for Indium, Cadmium and Tellurium in the making of Copper Zinc Tin Sulphide thin film (CZTS)
We report the growth ofCZTS thin film from
Summary
One of the very viable clean energy supply that can meet the demand of human population and industries is solar energy, but its production is costly because of the technology involved. To develop photovoltaic materials that are cost-effective and eco-friendly, elements that are non-toxic and readily available are desired. In this context, Copper, Zinc and Tin have been found as respective replacements for Indium, Cadmium and Tellurium in the making of Copper Zinc Tin Sulphide thin film (CZTS). CZTS thin films have been reported to be efficient and sustainable solar cell materials They possess good optoelectronic properties, near optimal direct band gap energy ranging from 1.4 to 1.6 eV and high optical coefficient (≥104 cm-1) [4, 5]. Several deposition techniques have been used to synthesise CZTS thin film These include pulsed laser deposition, co-sputtering, thermal evaporation, electrodeposition, sol-gel spin coating, spray pyrolysis, and so on [6,7,8]. From the results of the characterization, the growth process could be scaled up for industrial production
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