Abstract
Metal—semiconductor Schottky barrier contacts on SiC have been made both by cleaving single crystals of SiC (6H and 15R polytype) in ultrahigh vacuum in a stream of evaporating metal, and by evaporating metal onto etched surfaces. Results of capacitance and photoresponse measurements on n-type and p-type samples are presented. The barrier height on n-type samples is 1.45(±0.10) eV, independent of the work function of the metals (Au, Ag, Al). Nearly the same value is found for Al contacts on p-type SiC. When Au contacts are used, the barriers on heavily doped p-type crystals spread from 0.90–1.25 eV. The results for the purer n-type samples show that the Fermi level at the interface is fixed by surface states at the middle of the energy gap.
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