Abstract
The influence of grafted organic layers, obtained by aryldiazonium cations reduction, on the surface properties of p-type silicon was investigated. These layers were characterized by X-ray photoelectron spectroscopy (XPS), infrared spectroscopy and electrochemical methods. The results indicate a passivation of the silicon surface, a decrease of the oxidation of silicon. The results from electrochemical and XPS measurements can be used together to quantify the shift of the surface energy bands of the semiconductor caused by the presence of these layers at the surface. These measurements are important to understand the interfacial properties of the semiconductor and this grafting method can thus be used to adjust the surface energy levels positions toward those of different chemical reactions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
