Abstract
Simultaneous measurements of work function (ϕ) and C 1s core level shift were employed to determine the change in electron affinity (χ) and band bending as a function of hole sheet density on H-terminated diamond for atmospheric and fullerene (C60F48) induced surface conductivity. Contrary to earlier investigations, it is shown that changes in work function do not reflect variations in the position of the surface Fermi level in response to surface transfer doping. Instead, with a transition from −0.96 to −0.33 eV, χ accounts for a significant amount of the change in ϕ for hole densities between 5×108 and 4×1013 cm−2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
