Abstract
The partial removal of the III–V layers of a III–V/silicon-on-insulator hybrid wafer was investigated to realize III–V/Si hybrid photonic integrated circuits. Using transmission electron microscopy, we found that an amorphous layer was generated at the interface of a III–V/Si wafer fabricated by N2-plasma-activated bonding. In order to remove the III–V layers including the amorphous layers without damage to the Si surface, several etching processes were carried out, and the surface conditions were evaluated by X-ray photoelectron spectroscopy. As a result, we demonstrated comparable propagation losses in Si wire waveguides with and without the bonding/removal processes.
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