Abstract
The loss of atomic nitrogen due to surface and volume reactions in aparallel plate rf reactor was investigated using a pulsed N2 discharge andtwo-photon laser induced fluorescence detection of ground-state atomicnitrogen. Stainless-steel and aluminium electrode surfaces as well as siliconand boron nitride substrates were investigated for their reactivity withatomic nitrogen within the pulsed discharge environment at 1-5 Torr N2.Aluminium was found to have a surface loss rate of three to five times lessthan that of stainless-steel, while boron nitride had the lowest N atomrecombination rate of the materials studied. The N atom recombinationprobability coefficient was found to have an inverse pressure dependence foreach of the materials, with values ranging from 0.5 to 0.02%. The volume lossrate of N atoms was also quantified due to minute O2 impurities introducedinto the pulsed rf N2 discharge.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
