Abstract
Atomic force microscopy images showed that the size of the CdTe quantum dots (QDs) slightly increased with increasing annealing temperature up to 350 °C. Photoluminescence spectra showed that the excitonic peak corresponding to the interband transition from the ground electronic subband to the ground heavy-hole band (E1–HH1) in the CdTe/ZnTe QDs annealed at 350 °C was shifted to lower energy compared with that in as-grown CdTe/ZnTe QDs. The full width at half-maximum of the E1–HH1 transition peak in the CdTe/ZnTe QDs annealed at 350 °C decreased resulting from the improvement of the crystallinity for the annealed CdTe QDs.
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