Abstract
The oxygen-mediated two-step growth of high-quality CoSi2(001) films on Si(001) is demonstrated. In the first-step growth, uniform 6-monolayers (ML)-thick CoSi2(001) films with atomically flat surfaces and interfaces are grown by solid-phase epitaxy (SPE) at 470°C of 3 ML Co on O-adsorbed Si and O-covered 3 ML Co on clean Si. In both cases, O atoms improve the surface and interface flatness in SPE growth. In the second-step growth, 5.6 nm Co is solely deposited at 470°C on the O-covered CoSi2 template. We successfully achieve the growth of 20-nm-thick CoSi2(001) films with smooth surfaces and abrupt interfaces. In the O-mediated two-step growth, O atoms segregating to the film growth front suppress the lateral migration of Co atoms. Furthermore, in the second-step growth, the uniform template promotes homogeneous growth and keeps the surfaces and interfaces of CoSi2 films smooth. This novel technique, applicable to salicide processes, is highly suitable for the formation of epitaxial CoSi2 contacts in future ULSI devices.
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