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Abstract
Auger electron spectroscopy has been employed to study the compositional profiles of Cu2S-CdS thin film solar cells following different post-fabrication treatments. Particular consideration has been given to the effect of the deposition of copper over the upper Cu2S layer of a cell and subsequent annealing in air. The improved electrical stability which this treatment yields has been shown to be associated with reduced interdiffusion at the Cu2S-CdS interface so that even after extended heat treatment (90 min at 200 degrees C in air) a relatively abrupt Cu2S-CdS junction is retained. This is in marked contrast to the effect of similar annealing conditions in the absence of a copper overlayer which results in a significant out-diffusion of Cd from the CdS into the Cu2S layer.
Published Version
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