Abstract
Surface and interface phonon polariton modes in wurtzite ZnO/GaN heterostructure on wurtzite 6H–SiC substrate were investigated by a variable angle p-polarized infrared attenuated total reflection spectroscopy. Three dips corresponding to the surface and interface phonon polariton modes were observed; two of the dips that having a lower intensity level of reflectivity were the leaky modes whereas, another one was a real mode. The observations were verified with the surface polariton dispersion curve simulated based on an anisotropy model for a four-layer system. It was shown that the frequencies of leaky modes are predictable by considering the damping of the substrate.
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