Abstract
OF THESIS Surface and Interface Modification of Alternative Semiconductor Materials for Advanced Transistors By QI JIANG Thesis Director: Professor Eric Garfunkel Alternative semiconductor materials have the potential to replace silicon in next generation transistors. However, the lack of a stable insulating oxide such as SiO2 with high quality electrical properties prevents the further fabrication of competitive metal oxide semiconductor field effect transistors (MOSFETs). Germanium and gallium arsenide, two widely investigated semiconductor materials, have high prospects for generating high quality surfaces and interfaces between the dielectric layer and the semiconductor. In this thesis, wet chemistry cleaning methods have successfully removed the native oxide and other impurities on the Ge and GaAs surface. With further sulfur passivation in (NH4)2S solution, a clean passivated Ge and GaAs surface can be formed which shows appropriate stability and reliability
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