Abstract
An investigation of the surface and the electrical properties of inductively-coupled plasma (ICP)etched N-face n-GaN is reported. Furthermore, a method for reducing the Ohmic contact resistance on plasma-damaged N-face n-GaN is proposed. The I−V characteristics show that the Cl2 flow rate used for the ICP etching has a strong influence on the Ohmic behavior of the etched N-face n-GaN. We also found that the surfaces of the ICP-etched N-face n-GaN were damaged by increasing the Cl2 flow rate, resulting in deteriorating Ohmic behavior. However, the plasma damage caused by the ICP etching could be removed by using a KOH etching process, which resulted in a decreased contact resistance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
