Abstract
Epitaxial GaP films grown on silicon by chemical beam epitaxy contain planar defects that are related to three dimensional island formation of GaP nucleating on the silicon substrate. Attention in the surface preconditioning and to the surface chemistry during the initial stages of nucleation and growth allow the control from pronounced three-dimensional growth behavior toward almost two-dimensional growth. New results on defect structure and surface morphology obtained by a combination of atomic force microscope (AFM) and a new method p-polarized reflectance spectroscopy (PRS) are presented and related to growth conditions during the initial stages of heteroepitaxy.
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