Abstract
The density of states (DOS) of a-Si:H and the influence of light soaking were studied with the constant photocurrent method (CPM) and total-yield photoelectron spectroscopy for films prepared at substrate temperatures between 100°C and 400°C. While by the first method information about the bulk is obtained the other yields the DOS in the surface-near region. At the surface we observed a relative to the bulk enhanced density of states as well as an enhanced influence of light soaking. In addition changes of the DOS of fresh films occur upon annealing at 190°C which can be significantly larger than the light induced effects.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
