Abstract
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.
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