Surface analysis of patterned and selectively metallized silicon surfaces with imaging and static SIMS

Abstract

AbstractThe use of imaging and static secondary ion mass spectrometry is demonstrated for the chemical characterization of the top monomolecular layers of chemically modified and patterned silicon wafers. Surfaces with areas of different chemical compositions and reactivities (e.g. hydrophobic/hydrophilic) were created by chemical modification with a light‐sensitive organosilane, followed by UV irradiation or by chemical modification with 3‐aminopropyltriethoxysilane, followed by local removal of the silane through oxidation with UV ozone. The latter surfaces were also selectively metallized on the aminosilylated areas as an example of the applications possible for these patterned surfaces.The chemical surface composition and structure of the organosilylated and selectively metallized silicon wafers are adequately characterized with static SIMS. The patterns created on the wafers are observed with good contrast in the SIMS images of the molecular ionic fragments and elemental ions characteristic for the particular surface compositions. The results can be used to improve the chemical modification reactions.