Abstract
Cubic β-SiC(001) surfaces were cleaned in ultra-high vacuum by heating within a Si atomic flux, allowing contaminant species to desorb while continuously replenishing volatile surface Si. Using this technique, surface compositions ranging from Si-rich to Si-deficient were prepared. Surfaces were subsequently characterized using Auger electron, electron energy loss. X-ray photoelectron, and ultraviolet photoelectron spectroscopies as well as low energy electron diffraction. Data are presented for a range of surface compositions which result in formation of several reconstructions: (3 × 1), c(4 × 2), (2 × 1), c(2 × 2), and (1 × 1). Results are interpreted based on surface models which include ordered arrays of surface Si dimers for Si-rich and Si-terminated surfaces and graphite formation for Si-deficient surfaces.
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