Abstract
The use of laser desorption (LD) to desorb species from the surface and laser-induced fluorescence (LIF) to detect them in the gas phase during etching of Si(100) in a high-charge-density plasma of Cl2 and Cl2/HBr mixtures is reviewed. The LD-LIF intensities of SiCl and SiBr are used to track the surface coverages of SiClx (ads) and SiBrx (ads), respectively, as a function of RF power, DC bias, and partial pressure, and as a function of time when the plasma is turned on and off. In-line X-ray photoelectron spectroscopy (XPS), the use of which is validated by these in situ LD-LIF studies, is employed after etching to calibrate the surface coverages obtained from the LD-LIF measurements.
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