Surface activation-based nanobonding and interconnection at room temperature

Abstract

Flip chip nanobonding and interconnect system (NBIS) equipment with high precision alignment has been developed based on the surface activated bonding method for high-density interconnection and MEMS packaging. The 3σ alignment accuracy in the IR transmission system was approximately ±0.2 µm. The performance of the NBIS has been preliminarily investigated through bonding between relatively rough surfaces of copper through silicon vias (Cu-TSVs) and gold-stud bumps (Au-SBs), and smooth surfaces of silicon wafers. The Cu-TSVs of 55 µm diameter and the Au-SBs of 35 µm diameter with ∼6–10 nm surface roughness (RMS) were bonded at room temperature after surface activation using an argon fast atom beam (Ar-FAB) under 0.16 N per bump. Silicon wafers of 50 mm diameter with ∼0.2 nm RMS surface roughness were bonded without heating after surface activation. Void-free interfaces both in Cu-TSV/Au-SB and silicon/silicon with bonding strength equivalent to bulk fracture of Au and silicon, respectively, were achieved. A few nm thick amorphous layers were observed across the silicon/silicon interface that was fabricated by the Ar-FAB. This study in the interconnection and bonding facilitates the required three-dimensional integration on the same surface for high-density electronic and biomedical systems.