Abstract
The macroscopic twins which appear in the growth of thin layers of Ge deposited on Ge and GaAs from solution are studied by X-rays. In the particular case of the epitaxy in Pb-Sn melt, several anomalies of growth near eutectic point are shown: higher growth rates and systematic twinning. The anomalies are explained by particular properties of this melt: diminution of viscosity, increase of diffusion coefficient, diminution of adherence; the increased supersaturation at the interface which comes of it, associated to the mismatch between deposit and substrate can explain the formation of stacking faults which degenerate into macroscopic twins according to Kern and Simon's mechanism.
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