Abstract
In this paper we study results concerning the surface photovoltage of some cleaved III-V semiconductors illuminated by photon with hv > E g . We firstly present the theoretical models used to determine the photovoltage and then study the variation of this photovoltage with the photon density for typical surface states of III-V semiconductor surfaces. Afterwards experimental results we have obtained by Kelvin memasurements are analysed. Using simple hypothesis and model, we show that, from photovoltage curves, information on Fermi level pinning and on the surface state characteristics can be obtained.
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