Suppression of twin formation for the growth of InN(10‐1‐3) on GaAs(110) by metalorganic vapor phase epitaxy

Abstract

AbstractThe influence of hydrogen (H2) in the carrier gas on the crystalline quality as well as twin‐crystal formation were investigated in the metalorganic vapor phase epitaxy (MOVPE) of InN on GaAs(110). The inclusion of twin crystals of InN(10‐13) was suppressed by the introduction of a small amount of H2 during crystal growth. The surface morphology of the InN layer was also significantly influenced by the input partial pressure of H2 in the carrier gas. The suppression of twin‐crystal formation and improvements in the surface morphology can be explained by the differences in the stability of the In‐ and N‐polar InN{0001} asymmetric planes in the presence of H2. Both electronic and optical properties were improved by the introduction of H2, which was probably due to the reduction of impurities such as oxygen and carbon in the InN grown layer. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)