Abstract
Titanium disilicide formation on heavily arsenic-doped silicon substrate was investigated. The suppression of disilicide formation was due to the existence of an incubation time, but not to the reduction of the disilicide formation rate. The incubation time for disilicide formation was induced when the amount of arsenic was above a critical concentration (5×1020 atoms/cm3) at the silicon surface. Arsenic concentration higher than the critical value induced the retardation of transformation from the titanium-rich silicides to the disilicide. When the arsenic concentration was lower than the critical value, the disilicide formation occurred without an incubation time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
