Abstract
The temperature dependence of the hopping conductivity and the relaxation kinetics of the transient current in porous amorphous silicon are investigated after treatment in a hydrogen plasma at 200 °C. It is discovered that posthydrogenation of the material increases the dimension of the conducting channel from 2.5 to 3, while suppressing and slowing the relaxation of the transient current. The results obtained are attributed to passivation of the electrically active dangling bonds on the pore surface by hydrogen. It is concluded that electron transport in porous amorphous silicon in the temperature range T>T*, where T* lies in the range 130–270 K and depends on the density of states, takes place between superlocalized states of the internal surface, which is enriched with dangling bonds and acts as a fractal percolation system. When the temperature is lowered below T*, a transition to one-dimensional hopping conduction in the bulk silicon regions occurs.
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