Abstract
A new technique to suppress temperature dependence of EDFA gain is proposed and experimentally demonstrated. A specially designed EDF, the glass host of which is Sb-doped silica, showed an opposite sign of temperature dependent gain coefficients in C-band compared to Al-doped silica EDFs. Concatenation of those two EDFs showed an improved gain variation less than /spl plusmn/0.37 dB for the saturated gain over 15 dB, within -40 to +80/spl deg/C.
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