Abstract
A new bias pulse method was proposed to suppress read disturbance in unselected strings of 3-D stack NAND flash memories. Using the proposed read method, we could suppress effectively a large cell Vth shift generated by boosting hot carrier injection. As a result, the cell Vth shift in unselected string is quite similar to normal read disturbance in select string. The proposed read method was verified by both measurement and simulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
