Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Abstract

Fully-depleted metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (Separation by IMplanted Oxygen) wafer are very promising devices for next-generation low-power high-speed LSIs. However, it is essential to suppress parasitic bipolar action in order to improve source-drain breakdown voltage for practical use in LSIs except for extremely low-voltage-operated applications of less than around 1 V. In this paper, a new suppression method of parasitic bipolar action is proposed, which uses recombination centers near the source junction. Using a two-dimensional (2-D) device simulator, the effects of recombination centers are analyzed, and an effective and stable position for the region containing recombination centers is clarified. Moreover, the effectiveness of the new method is experimentally verified using Ar ion-implantation into the source/drain regions, to introduce the recombination centers. The new method is also remarkably effective in improving hot-carrier reliability, because a hot-carrier degradation mode peculiar to MOSFETs/SOI is able to be suppressed by it.