Abstract
The effect of oxidation of 10nm Ni∕Si0.75Ge0.25 and 10nm Ni(10at.%Pt)∕Si0.75Ge0.25 thin films at annealing temperatures ranging from 400to800°C has been studied in detail by Rutherford backscattering spectrometry analysis, cross-sectional transmission electron microscopy, energy dispersive x-ray, and sheet resistance measurements. It is observed that for the films without Pt incorporation, almost two-thirds of the germanosilicide is oxidized. The incorporation of a Pt(10at.%) into Ni not only dramatically reduces the oxidation of the germanosilicides, but also improves the interfacial roughness and morphology. The integral amount of oxygen found in the germanosilicide in the Ni(10at.%Pt)Si0.75Si0.25 films [(1.1±0.17)×1017at.∕cm2] is approximately four times less than that of NiSi0.75Si0.25 [(4.0±0.28)×1017at.∕cm2]. This result is explained in terms of the roles of the higher melting point and bond energy of PtSi in NiSi and NiGe, and much lower free energy of the formation of platinum oxide.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
