Abstract
The new a-Si:H TFT pixel circuit, which successfully suppresses OLED current error caused by the hysteresis of a-Si:H TFT, is proposed and fabricated.When an identical VGS and VDS is applied to a-Si:H TFT device, the drain current of a-Si:H TFT is altered due to the hysteresis phenomenon, which changes the interface trapped charge between an a-Si active layer and SiNx gate insulator. When the data voltage of 8V is applied to the conventional a-Si:H TFT pixel, OLED current is changed from 117nA to 167nA due to the hysteresis phenomenon of a-Si:H TFT. In our proposed pixel circuit, OLED current error caused by the hysteresis is successfully suppressed by applying a reset voltage to the gate node of current-driving a-Si:H TFT before a data voltage is written, because a reset voltage can enable the starting gate voltage for a desired one not to be varied.
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