Abstract
We carried out direct impurity doping in InAs/GaAs quantum dots (QDs) by selecting the self-assembled growth steps. The photoluminescence (PL) intensity of the Si-doped QDs is enhanced, and thermal quenching of the PL intensity is found to be considerably suppressed, whereas such improvement was not confirmed in Be-doped QDs. The excitation energy dependences of the PL intensity and the time-resolved PL indicate a reduction in the nonradiative recombination probability during the thermalization of carriers generated by high-energy photons. From these results, excess electrons in doped QDs neutralize and, therefore, inactivate the nonradiative recombination centers created by electron traps.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
