Abstract
Nickel oxide (NiO) would be an alternative hole transport layer for perovskite light-emitting diodes (PeLEDs). However, the performances of NiO-based PeLEDs are still inferior due to the adverse non-radiative recombination at the interface. Here, a poly(9-vinlycarbazole) (PVK) layer is inserted between the perovskite and the NiO film. The photoluminescence quantum yield is dramatically enhanced from 23% to 54% in the presence of PVK layer owing to suppression of the non-radiative recombination. Combined with the favorable hole injection from the ladder energy band scheme of NiO/PVK layer, an external quantum efficiency of 11.2% for a green PeLED is achieved. This work demonstrates the importance of interface control to boost the radiative recombination rate for high performance PeLEDs.
Highlights
A poly(9-vinlycarbazole) (PVK) layer was introduced onto a Nickel oxide (NiO) surface before depositing the perovskite film
The photoluminescence quantum yield is dramatically enhanced from 23% to 54% in the presence of PVK layer owing to suppression of the non-radiative recombination
The photoluminescence quantum yield (PLQY) of perovskite film with this organic interlayer yielded a value of 54%, and the perovskite light-emitting diodes (PeLEDs) achieved a high current efficiency of 34.2 cd/A and an external quantum efficiency (EQE) of 11.2%
Summary
A poly(9-vinlycarbazole) (PVK) layer was introduced onto a NiO surface before depositing the perovskite film. Combined with the favorable hole injection from the ladder energy band scheme of NiO/PVK layer, an external quantum efficiency of 11.2% for a green PeLED is achieved.
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