Suppression of miscibility gaps in vapor-liquid-solid InGaAs and InGaN nanowires

Abstract

Miscibility gaps in ternary III-V and III-N alloys often prevent their compositional tuning required for new generation electronic and optoelectronic devices. Here, we show how the miscibility gaps are suppressed on kinetic grounds at high enough supersaturations in liquid droplets catalyzing the vapor-liquid-solid growth of ternary III-V and III-N nanowires. We give two examples for highly mismatched InGaAs and InGaN material systems in terms of the compositional diagrams describing the solid composition as a function of the indium content in the liquid or vapor phase.