Suppression of leakage current using annealed Er2O3 nanowires as a superior dielectric material

Abstract

Erbium oxide ( $$\text {Er}_{2}\text {O}_{3}$$ ) NWs were synthesized on n-type Si by the glancing angle deposition technique incorporated in E-beam evaporation system. The fabricated samples underwent different temperature treatments. The structure and morphology of the fabricated samples were analyzed by field emission scanning electron microscopy and transmission electron microscopy. The leakage current, capacitance, and dielectric values of the samples were examined at room temperature. The $$\text {Er}_{2}\text {O}_{3}$$ NW annealed at 550 °C have excellent dielectric properties, such as low leakage current of $$5.48 \times 10^{-11}$$ $$A$$ , low $$D_{it}$$ of $$2.30 \times 10^{10}$$ $${\text{eV}}^{-1} {\text{cm}}^{-2}$$ , high dielectric constant of 19.88, and EOT as low as 5.8 nm.