Abstract
Two kinds of ZnO nanorods were synthesized using thermal evaporation and solvothermal methods. Both of the as-prepared samples exhibit strong green luminescence, which is commonly attributed to the surface defect emission of the nanostructure due to its large surface-to-volume ratio. However, we found surface passivation of these ZnO nanorods by a thin SiO2 layer failed to improve the band edge emission and reduce the green emission significantly. On the other hand, we found that introducing Ga to the ZnO nanorods during the thermal evaporation growth would significantly depress the green emission. The experimental results suggested that the interior structure quality of the ZnO nanorods is sensitive to the growth techniques and conditions, and surface defects of ZnO are not necessarily responsible for the green emission observed from these nanorods.
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