Abstract
In this study, amorphous‐like tungsten films were deposited by a chemical vapor deposition (CVD) process. The deposited film has shown reduced resistance compared with , and it also blocked the fluorine atoms from diffusing into the gate oxide. Furthermore, when the amorphous‐like tungsten film was deposited prior to a typical CVD tungsten film with a columnar structure, it not only showed excellent barrier characteristics in impeding fluorine impurities, but its resistance was also substantially lower than a single layer of a‐W film. It is also found in our work that a bilayer film containing typical CVD tungsten/amorphous‐like CVD tungsten is a better wordline structure due to its extraordinarily low resistivity and low fluorine contamination. © 1999 The Electrochemical Society. All rights reserved.
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