Abstract
Far-infrared (FIR) photoconductivity induced by cyclotron resonance in edge states of quantum Hall devices are studied by carrying out time-resolved measurements. It is found that the recombination of electron–hole pairs excited via cyclotron resonance in edge states is significantly suppressed, yielding a surprisingly long recombination lifetime (∼10ms). This is in marked contrast to much shorter recombination lifetimes (∼1ms) in bulk states. The experimental results lead us to suggest that the edge-state FIR photoconductivity is induced by an effect of electric polarization. This implies also that edge states can be a promising candidate for application as a FIR detector.
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