Abstract
Diffusion of phosphorous and arsenic in germanium under in situ proton irradiation has been performed and analyzed with secondary ion mass spectrometry. Dopant profiles corresponding to proton-exposed regions exhibit a higher penetration depth and more pronounced box shape than profiles of nonexposed regions. Continuum theoretical simulations reveal that diffusion under irradiation is much less affected by inactive donor-vacancy clusters than diffusion under annealing only. The suppression of donor-vacancy clusters is caused by interstitials in supersaturation and vacancy concentrations close to thermal equilibrium. Concurrent annealing and irradiation have the potential to attain high active doping levels in Ge.
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