Abstract
AbstractAn In0.21Ga0.79N epilayer has been studied by using spatially‐resolved photoluminescence spectroscopy and Auger electron spectroscopy. The photoluminescence intensity is shown to be distributed highly inhomogeneously, while the epilayer also exhibits strong defect‐related emission. It is shown that laser annealing at high enough power densities causes redistribution of indium atoms and results in suppression of the defect‐related emission. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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