Abstract

This paper presents a method of suppressing kink effects which originate in the corners of triple-gate bulk FinFETs. We propose corner implantation to turn off the parasitic corner device which has lower threshold voltage than the bulk device. This method is investigated in triple-gate bulk FinFETs by 3D numerical simulations. Threshold voltage shift of 0.434 V with a decrease in on-state current of only 23% is achieved, while the kink effect in devices' current-voltage characteristics is completely eliminated. Corner implantation improves devices' immunity to short-channel effects.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call