Abstract
A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous freelayer was investigated. The typical sample structure consists of Ta42∕CoZrNb9.2∕IrMn15.5∕CoFe3.3∕AlOx2∕freelayer∕AlOx2∕CoFe7.5∕IrMn15.5∕Ru60(nm). The freelayer includes CoFe2.3∕CoZrNb3.4∕CoFe3. A CoFe 5nm single freelayer was also prepared for reference purpose. Although TMR ratio and RA product appear similar, less attenuation in the TMR ratio was observed at 0.4V for the junction with CoZrNb layer. Coercivity and interlayer coupling were reduced while squareness was improved. The top portion of the DMTJ including top barrier became more uniform after amorphous layer insertion.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
