Suppression of ambipolarity in tunnel‐FETs using gate oxide as parameter: analysis and investigation

Abstract

In this study, the authors present a double-gate tunnel field-effect transistor with dual gate oxide thickness (henceforth referred to as DOT-DGTFET) to suppress ambipolar current conduction (I amb). Conventional n-type DGTFET conducts current for negative V GS also and poses a challenge for circuit design. Conduction current in n-type DGTFET for negative V GS is referred to as ambipolar current (I amb). In the proposed DOT-DGTFET structure, a thin gate oxide of 3 nm is used towards the source–channel junction and a thick gate oxide is used towards the drain–channel junction. Use of thicker gate oxide towards drain–channel junction suppresses I amb significantly while only marginally affecting I ON. Subsequently, the proposed technique for ambipolarity suppression is compared with some of the existing techniques and they observe that DOT-DGTFET suppresses ambipolarity significantly with minimal effect on the ON state current.