Abstract
We developed an additional nitrogen ion implantation process to suppress the abnormal oxidation of polycrystalline WSi/sub x//P-doped Si stack gate electrode during gate re-oxidation around 750/spl deg/C. The abnormal oxidation was attributed to oxidation during gate re-oxidation, resulting in deformation of the gate electrode profile. A method to suppress the abnormal oxidation is to employ pre-annealing in nitrogen ambient over 850/spl deg/C before gate re-oxidation; however, it leads to unstable pMOSFETs due to high thermal budget. Thus, we introduced the nitrogen implantation (N/sup +/ 10 keV/5/spl times/10/sup 15/ cm/sup -2/) prior to gate re-oxidation to improve the oxidation resistance of WSi/sub x/. The abnormal oxidation of WSi/sub x/ was effectively suppressed by nitrogen ion implantation. Moreover, the additional nitrogen ion implantation did not degrade gate oxide integrity (GOI).
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