Abstract
This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT exhibited only a threshold voltage (Vth) shift of −2.05 V under negative bias illumination stress (NBIS) conditions, whereas the pristine device suffered from a negative Vth shift of 3.76 V under identical conditions. X-ray photoelectron spectroscopic analysis revealed that the oxygen vacancy defect density was diminished via the oxygen plasma treatment. This suggests the Vth degradation under NBIS is due to photo-transition of oxygen vacancy defects.
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