Abstract
The improvements in the device characteristics of fully depleted nMOSFETs/SIMOX treated using a back-side bias-temperature treatment are presented This method suppresses the parasitic bipolar action without causing degradation of device characteristics. Suppression of parasitic bipolar action increases the source-drain breakdown voltage by about 500 mV and increases device lifetime under hot-carrier stress by a factor of 15. The effects of this treatment can be attributed to the generation of traps at the interface between the buried oxide and the active silicon layer.
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