Abstract
The memory effect of Al doping in 3C-SiC prevents sharp interfaces between layers of different doping levels and can lead to unintentional doping of subsequent epilayers and even growth runs. Introducing HCl into the growth phase of 3C-SiC reduces the Al incorporation but has a significant impact on Al dopant decay rates and background levels within the chamber, resulting in far sharper doping profiles. The impact of relatively high flow rates of HCl is low within a chlorine-based growth system giving fine control over its influence on the growth process and memory effect.
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