Suppressing Interfacial Charge Recombination in Electron‐Transport‐Layer‐Free Perovskite Solar Cells to Give an Efficiency Exceeding 21 %

Abstract

The performances of electron-transport-layer (ETL)-free perovskite solar cells (PSCs) are still inferior to ETL-containing devices. This is mainly due to severe interfacial charge recombination occurring at the transparent conducting oxide (TCO)/perovskite interface, where the photo-injected electrons in the TCO can travel back to recombine with holes in the perovskite layer. Herein, we demonstrate for the first time that a non-annealed, insulating, amorphous metal oxyhydroxide, atomic-scale thin interlayer (ca. 3 nm) between the TCO and perovskite facilitates electron tunneling and suppresses the interfacial charge recombination. This largely reduced the interfacial charge recombination loss and achieved a record efficiency of 21.1 % for n-i-p structured ETL-free PSCs, outperforming their ETL-containing metal oxide counterparts (18.7 %), as well as narrowing the efficiency gap with high-efficiency PSCs employing highly crystalline TiO2 ETLs.