Suppressing four-wave mixing in warm-atomic-vapor quantum memory

Abstract

Warm-atomic-vapor cells may be employed as quantum-memory components in an experimentally convenient implementation of the Duan-Lukin-Cirac-Zoller protocol. Previous studies have shown the performance of these cells is limited by the combination of collisional fluorescence during the writing process and four-wave mixing during the reading process and have proposed to overcome this by a combination of optimized detuning and prepumping with circularly polarized write and read beams. Here we show that the Raman matrix elements involving the excited $P$ (${F}^{\ensuremath{'}}=I\ensuremath{-}\frac{1}{2}$ and ${F}^{\ensuremath{'}}=I+\frac{1}{2}$) levels of all alkali atoms are always equal in magnitude and opposite in sign when the write and the anti-Stokes (Stokes) photons have the opposite helicity, and the Raman transitions via the two levels interfere destructively. The existence of an optimal detuning is demonstrated for a given dark-count rate of the single-photon detector. The predicted behavior is observed experimentally in a warm Rb cell with buffer gas.