Abstract
Adjusting compositions of two barriers forming a (111)-oriented InGaAs/AlGaAsSb quantum well (QW) is proposed as a method to eliminate the effective magnetic field due to the Rashba and linear-in-momentum Dresselhaus spin–orbit interactions in the zeroth and first orders in the gate electric field. The resulting suppressed Dyakonov–Perel spin relaxation is used to achieve a high on/off ratio of the spin-relaxation rate at room temperature in a double-QW structure.
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