Abstract
Influence of work function (WF) uniformity of metal gates (MGs) on current-onset voltage (COV) fluctuation is investigated in detail for MG FinFETs. In addition to significantly suppressed variability of threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ) itself, FinFETs with an amorphous TaSiN MG exhibit smaller COV fluctuation than that with a polycrystalline TiN MG. It is revealed that the COV variability is caused by the potential non-uniformity in the channel due to the WF variation of the poly grains and is effectively improved using the amorphous MG.
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