Abstract
InP-based multi-finger double-heterojunction bipolar transistors (DHBTs) with an Au subcollector were fabricated on a highly-thermal-conductive SiC substrate by surface-activated bonding (SAB). The fabricated DHBTs have good electrical properties without any degradation due to the wafer-bonding process. They also show 68% reduction of thermal resistance (R th) compared with a conventional DHBT on an InP substrate. Reduced R th enables us to increase current density while maintaining the junction temperature of DHBTs, which boosts their operating speed and enhances their integration density. Therefore, multi-finger DHBTs on a SiC substrate fabricated by SAB is very useful for reducing IC chip size and increasing the operation speed.
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